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  Datasheet File OCR Text:
 TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS
Copyright (c) 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997
q q q q q
20 W Pulsed Power Dissipation 100 V Capability 2 A Continuous Collector Current 4 A Peak Collector Current Customer-Specified Selections Available
MDTRAB
LP PACKAGE (TOP VIEW)
E C B
1 2 3
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING TIPP31 Collector-base voltage (IE = 0) TIPP31A TIPP31B TIPP31C TIPP31 Collector-emitter voltage (IB = 0) TIPP31A TIPP31B TIPP31C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Pulsed power dissipation (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%. 2. Derate linearly to 150C case temperature at the rate of 6.4 mW/C. 3. VCE = 20 V, IC = 1 A, tp = 10 ms, duty cycle 2%. V EBO IC ICM IB Ptot PT Tj Tstg TL VCEO VCBO SYMBOL VALUE 40 60 80 100 40 60 80 100 5 2 4 1 0.8 20 -55 to +150 -55 to +150 260 V A A A W W C C C V V UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
1
TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25C case temperature
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS TIPP31 V (BR)CEO IC = 5 mA IB = 0 TIPP31A TIPP31B TIPP31C VBE = 0 V BE = 0 V BE = 0 V BE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = IC = 1A 2A 2A 2A (see Notes 4 and 5) (see Notes 4 and 5) (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 20 10 1 1.5 V V TIPP31 TIPP31A TIPP31B TIPP31C TIPP31/31A TIPP31B/31C MIN 40 60 80 100 0.2 0.2 0.2 0.2 0.3 0.3 1 mA mA mA V TYP MAX UNIT
(see Note 4) VCE = 40 V
ICES
Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio
V CE = 60 V V CE = 80 V V CE = 100 V VCE = 30 V V CE = 60 V VEB = VCE = V CE = 5V 4V 4V
ICEO IEBO hFE VCE(sat) VBE hfe
IB = 375 mA VCE = 4V
VCE = 10 V VCE = 10 V
IC = 0.5 A IC = 0.5 A
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NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
PRODUCT
INFORMATION
2
TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
LP003 (TO-92) 5,21 4,44 3,43 MIN. 2,67 2,03 4,19 3,17 2,67 2,03 LP003 Falls Within JEDEC TO-226AA Dimensions
Seating Plane
5,34 4,32
1,27 (see Note A) 12,7 MIN. 0,56 0,40
1
3
1,40 1,14 2,67 2,41
2
0,41 0,35
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: Lead dimensions are not controlled in this area.
MDXXAX
PRODUCT
INFORMATION
3
TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA
LP003 (TO-92) 3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
LP003 (TO-92) - Formed Leads Version 5,21 4,44 3,43 MIN. 2,67 2,03 4,19 3,17 2,67 2,03 LP003 Falls Within JEDEC TO-226AA Dimensions
5,34 4,32
4,00 MAX.
0,56 0,40
1
2
3 2,90 2,40 0,41 0,35
2,90 2,40
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAR
PRODUCT
INFORMATION
4
TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA
LPR tape dimensions
LP Package (TO-92) Tape (Formed Lead Version)
5,21 4,44 3,43 MIN. 2,67 2,03 5,34 4,32 4,19 3,17 2,67 2,03
4,00 MAX. 0,56 0,40 0,41 0,35
13,70 11,70
32,00 23,00
27,68 17,66
2,50 MIN. 16,50 15,50 11,00 8,50 9,75 8,50
0,50 0,00 19,00 5,50
19,00 17,50
2,90 2,40 2,90 2,40 6,75 5,95 13,00 12,40
o 4,30 3,70
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAS
PRODUCT
INFORMATION
5
TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
PRODUCT
INFORMATION
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